A study published in Advanced Energy and Sustainability Research has highlighted the effectiveness of microwave annealing in activating hydrogen within hydrogen-rich dielectrics on poly-Si passivating contacts compared to traditional N2 annealing methods. The research focused on hydrogenation of dangling bonds at the Si/SiO2 interface in doped poly-Si contacts, vital for tunneling oxide passivated contacts and poly-Si on oxide solar cells. Microwave annealing, with its shorter processing times and cost-effective passivation, emerged as a promising alternative to achieve optimal hydrogenation. The study utilized industrial n-type Czochralski-Si wafers with various dielectric passivation layers deposited on them to investigate their impact on passivation. Results showed that microwave annealing led to enhancements in passivation after just one minute, with SiNy layers standing out for their superior passivation effects. The PL imaging revealed that different dielectric coatings impacted passivation levels, with SiNy demonstrating the best passivation for c-Si bulk and interfaces. Despite some variations in PL intensity and peak signals, microwave-annealed specimens displayed comparable or even better results in hydrogen activation than traditional N2 annealing. The research suggests that microwave annealing could offer an efficient and cost-effective solution for hydrogenation in poly-Si passivating contacts, potentially revolutionizing industrial silicon solar cell production.